Synthesis and properties of highly conductive thin films as buffer layer from sol-gel process

Abstract

We prepared epitaxial growth SrRuO3 thin film on LaAlO3 (001) (LAO) single crystal substrate and highly oriented BaTiO3 ferroelectric thin film on the epitaxial SrRuO3 thin film. A homogeneous precursor solution for preparing SrRuO3 thin film was prepared with Sr(O—i—C3H7)2 and Ru(NO)(NO3)3 as starting materials, and 2-methoxy ethanol as solvents. The as-coated thin films were heat treated at temperatures from 723 to 1273 K for 1 h in air. SrRuO3 grew epitaxially on LAO(001) substrate, which were confirmed by XRD theta-2theta method and XRD pole figure analysis. The crystallographic relationship of the film and substrate was SrRuO3(001) parallel to LAO(001) and SrRuO3[110] parallel to LAO[100]. A homogeneous precursor solution for preparing BaTiO3 thin film was prepared with Ti[O—n—(CH2)3CH3]4 and Ba(OCOCH3)2 as starting materials, and acetic acid, 2-methoxy ethanol. SrRuO3 coated LAO substrates were coated by spin-coating method with the coating solution. The as-coated thin films were heat treated at temperatures from 973 to 1173 K in air. It was confirmed that the thin films were growing orientated for c-axis by measurement of XRD theta-2theta method.