Abstract
AbstractGaAs nanocrystals have been formed by the sequential ion implantation method. The sequence of Ga and As ion implantation (i.e., Ga + As or As + Ga) is found to affect the size distributions of GaAs nanocrystals significantly. The nanocrystal sizes are much bigger in the samples with Ga implanted first than those with As implanted first. This phenomenon is explained by the different diffusion behaviors of Ga and As species. Different precipitate regions have been observed in the samples implanted with Ga first and then As. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage.
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