Abstract
Within the research, SiO2 – Ta2O5 films from film-forming solutions based on tetraethoxysilane and tantalum chloride (V) are synthesized. Physicochemical patterns and specifics of producing the films are determined by means of IR spectroscopy and thermogravimetric analysis. The processes of SiO2 – Ta2O5 films formation are studied. Interrelation between SiO2 – Ta2O5 composition, concentration of incoming components and their physicochemical properties are revealed.
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