Abstract
Large-scale Si3N4 nanowires were successfully synthesized by the reaction of La/SiO2 composites and Si powders in N2 atmosphere at 1200°C for 6h. The products were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrometry, scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM). The results show that the products mainly consist of hexagonal Si3N4 nanowires and a small amount of Si2N2O. The Si3N4 nanowires have a length of several hundreds of microns and a diameter of 100–200nm, and Si3N4 nanowires grow along [100] direction. The growth of Si3N4 nanowires follows vapor–solid (VS) mechanism, and the growth process of the nanowires is simply discussed. The photoluminescence (PL) spectrum of Si3N4 nanowires at room temperature shows four emission peaks at 406, 472, 495 and 605nm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
