Abstract
Helical nanowires of cobalt phthalocyanine (CoPc) were fabricated on Si substrate by a physical vapor deposition (PVD) method and characterized by scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and ultraviolet‐visible spectroscopy. The results indicated that the morphology, size, and crystal structure of CoPc helical nanowires were dependent on the substrate temperature. The deposited CoPc helical nanowires showed a perfect crystalline feature. Moreover, the CoPc helical nanowire-based devices were fabricated and the drain-source current exhibited obvious dependence on the gate voltage, implying that CoPc helical nanowires were of potential in the application fields of optoelectronic devices.
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