Abstract
The ternary chalcogenide Cu3VSe4 (CVSe) with sulvanite structure has been theoretically predicted to be a promising candidate for photovoltaic applications due to its suitable bandgap for solar absorption and the relatively earth-abundant elements in its composition. To realize the absorber layer via an inexpensive route, printed thin-films could be fabricated from dispersions of nano-sized Cu3VSe4 precursors. Herein, cubic Cu3VSe4 nanocrystals were successfully synthesized via a hot-injection method. Similar with reported Cu3VS4 nanocrystals, Cu3VSe4 nanocrystals with cubic structure exhibit three absorption bands in the UV-Visible range indicative of a potential intermediate bandgap existence. A thin film fabricated by depositing the nanoparticles Cu3VSe4 on FTO coated glass substrate, exhibited a p-type behavior and a photocurrent of ~ 4 μA/cm2 when measured in an electrochemical cell setting. This first demonstration of photocurrent exhibited by a CVSe nanocrystals thin film signifies a promising potential in photovoltaic applications.
Highlights
IntroductionThe class of sulvanites, with the formula Cu3MCh4 (M = V, Nb, Ta; Ch = S, Se, Te) is comprised of ternary copper chalcogenide semiconductors with the calculated optical band gap ranging from 1.19 eV to 2.60 eV, theoretically predicted p-type conductivity, and with potential in photovoltaic and optoelectronic applications
The class of sulvanites, with the formula Cu3MCh4 (M = V, Nb, Ta; Ch = S, Se, Te) is comprised of ternary copper chalcogenide semiconductors with the calculated optical band gap ranging from 1.19 eV to 2.60 eV, theoretically predicted p-type conductivity, and with potential in photovoltaic and optoelectronic applications. [1,2,3]As suggested by current thin-film photovoltaic technologies, the absorbing layer of a thinfilm solar cell should have an optical band gap of about 1.5 eV and a low hole effective mass
The thermal stability of synthesized CVSe NCs was investigated using thermogravimetric analysis (TGA), where 18.5 mg of CVSe NCs were annealed in the range of 25–800 ̊C at a ramping temperature of 20 ̊C/min under argon atmosphere
Summary
The class of sulvanites, with the formula Cu3MCh4 (M = V, Nb, Ta; Ch = S, Se, Te) is comprised of ternary copper chalcogenide semiconductors with the calculated optical band gap ranging from 1.19 eV to 2.60 eV, theoretically predicted p-type conductivity, and with potential in photovoltaic and optoelectronic applications. As suggested by current thin-film photovoltaic technologies, the absorbing layer of a thinfilm solar cell should have an optical band gap of about 1.5 eV and a low hole effective mass. The sulvanites exhibit low hole effective mass of Cu3MCh4 decreasing along the chalcogen (Ch = S, Se, Te) series, and increasing with the transition metal group (V, Nb, Ta). The Kehoe group reported calculated band gaps of sulvanite structured Cu3MCh4. The optical band gaps of Cu3VTe4, Cu3NbTe4, Cu3VSe4, Cu3TaTe4, and Cu3VS4 are 1.19 eV, 1.46 eV, 1.49 eV, 1.69 eV, and 1.72 eV, respectively, are suitable for photovoltaic applications. [3, 4]
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