Abstract
A simple and convenient method has been demonstrated to fabricate halogen-doped ZnO phosphors via annealing the mixture of ZnS and KX (X = Cl, Br, I) in air. The as-prepared products were characterized by X-ray diffraction (XRD), photoluminescence (PL), and photoluminescence excitation (PLE), respectively. The experimental results indicate that the green PL intensity and the excitation band at ∼ 3.20eV are enhanced significantly for the samples doped with halogens, compared with those of the undoped ZnO. The incorporation of halogens into ZnO is proposed to increase the oxygen vacancies and consequently the PL intensity of the green emission band is highly enhanced.
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