Synthesis and Optical Properties of B-Mg co-Doped ZnO Nanoparticles

Yuechan Li,Yongli Li,An Xie

doi:10.3390/coatings11080882

Abstract

Doping impurity into ZnO is an effective and powerful technique to tailor structures and enhance its optical properties. In this work, Zn1−xMgxO and Zn1−x−yMgxByO nanoparticles (x = 0, 0.1, 0.2, 0.3, 0.4; y = 0, 0.02, 0.04) were synthesized via one-pot method. It shows that the Mg and B dopants has great influence on crystallinity and surface morphology of ZnO nanoparticles, without changing the wurtzite structure of ZnO. The band structure study indicates that the competition of Conductive Band (CB) shift, Burstein–Moss (B-M) shift and Shrinkage effect will cause the band gap energy change in ZnO.

Highlights

As one of the third-generation wide band gap semiconductor materials, zinc oxide (ZnO) has attracted great attention in the field of optoelectronic functional materials due to its excellent physical and chemical properties, such as large exciton binding energy (60 meV), wide direct band gap energy (3.37 eV), low cost, and facile preparation [1,2,3,4].In recent years, researchers have discovered that ZnO nanoparticles (NPs) have unique and superior structural, optical, electronic, and chemical properties compared to bulk ZnO materials [5,6]
It can be seen from the patterns that the synthesized nanoparticles have sharp diffraction peaks, which indicates that the prepared nanoparticles have good crystallinity
The characteristic diffraction peaks indicate that the synthesized nanocrystals are ZnO with a wurtzite hexagonal structure (PDF# 80-0074)

Summary

Introduction

As one of the third-generation wide band gap semiconductor materials, zinc oxide (ZnO) has attracted great attention in the field of optoelectronic functional materials due to its excellent physical and chemical properties, such as large exciton binding energy (60 meV), wide direct band gap energy (3.37 eV), low cost, and facile preparation [1,2,3,4].In recent years, researchers have discovered that ZnO nanoparticles (NPs) have unique and superior structural, optical, electronic, and chemical properties compared to bulk ZnO materials [5,6]. As one of the third-generation wide band gap semiconductor materials, zinc oxide (ZnO) has attracted great attention in the field of optoelectronic functional materials due to its excellent physical and chemical properties, such as large exciton binding energy (60 meV), wide direct band gap energy (3.37 eV), low cost, and facile preparation [1,2,3,4]. Doping impurity elements into the target lattice is an effective and powerful technique that can change the electronic structure and enhance electrical and optical properties [12]. Various elements (for example, Al, Ga, Mg, Mn) [13,14,15,16] have been used as donors to improve the optical, physical, and chemical properties of ZnO. Mg-doped ZnO NPs have attracted great attention; because the ionic radius between Mg2+

Methods

Results

Conclusion