Abstract

Catalyst annealing time and growth pressure play a crucial role in the chiral selective and high-efficiency growth of single-walled carbon nanotubes (SWCNTs) during low pressure chemical vapor deposition (LPCVD). We achieved a high growth rates for SWCNTs and a change the chiral distribution towards metallic (n, m) increasing the catalyst annealing time in hydrogen. A strong correlation is revealed between the catalyst annealing time at lower growth pressures and the shape of the G band, which indicates the metallic or semiconducting nature of the SWCNT and predict the chirality distribution. Under a 15min annealing time and 10mbar of growth pressure, the bottom of the G band is broadened with a sharp G− peak, and the G-band exhibited asymmetrical Breit–Wigner–Fano (BWF) shape. In addition, the growth of SWCNTs with smaller diameters and rich in metallic character is confirmed by the shift of the G-band to a smaller Raman frequency. Homogeneity and vertical alignment of as-grown SWCNT arrays are optically studied using UV/vis/NIR Spectrophotometer. Wavelength-independent and low reflectance resulted from the growth of uniform arrays of SWCNTs. Because of their tunable electronic and optical properties, selective growth of SWCNTs promises great application potential, particularly in electronics and solar industries.

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