Abstract
Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°–1500°C had a high‐quality factor (Q×f) ranging from 40 000 to 192 173 GHz and a low‐dielectric constant (ɛr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛr=12.4, Q×f=192 173 GHz, and τf=−19.2 ppm/°C.
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