Abstract
A simple method for fabricating an Al@Al2O3 core-shell nanoparticle (NP) layer with narrow spatial distributions is demonstrated, and the resultant NP layer was examined for possible application to floating gate memory devices. The Al@Al2O3 core-shell NP layer was self-assembled by annealing a sandwich structure composed of a thin Al film sandwiched between two silicon-rich oxide layers within SiO2. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor capacitor with an Al@Al2O3 core-shell NP floating gate are indicated to have a large C-V memory window and good data retention.
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