Abstract
Two novel 3′,4′,5′-trifluorobiphenyl-based aromatic polyimide monomers, 2,2′-bis[4′-(3′′,4′′,5′′-trifluorophenyl)phenyl]-4,4′-biphenyl diamine (BTFBPD) and 2,2′-bis[4′-(3′′,4′′,5′′-trifluorophenyl)phenyl]-4,4′,5,5′-biphenyltetracarboxylic dianhydride (BTFBPDA) were synthesized. Two fluorinated polyimides (PIs), PI(BTFBPD-DPBPDA) and PI(BTFBPD-BTFBPDA) were prepared via a two-step procedure using BTFBPD reacting with 2,2′-diphenyl-4,4′,5,5′-biphenyltetracarboxylic dianhydride (DPBPDA) and BTFBPDA, respectively. BTFBPD was characterized with single crystal X-ray diffraction analysis and the geometric parameters showed the noncoplanar twisted character. PIs exhibited highly organo-solubility and thermal stability. The PI films sandwiched between an indium-tin oxide(ITO) bottom electrode and Al top electrode exhibited two accessible conductivity states and can be switched from the low-conductivity to the high-conductivity. The memory devices with the configuration of Al/PI(BTFBPD-DPBPDA)/ITO exhibited a flash type memory capability, whereas the Al/PI(BTFBPD-BTFBPDA)/ITO presented a write once read many times (WORM) memory capability. The fabricated devices showed low turn-on threshold voltages of −1.3 V (PI(BTFBPD-DPBPDA)) and −1.7 V (PI(BTFBPD-BTFBPDA)) and both ON/OFF current ratios on the order of 103 to 104.
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