Abstract
NIR phosphor-converted light emitting diodes possess extensive application in a variety of occasions. And the exploration of NIR phosphors having outstanding quantum yield and thermostability is still a challenge. In this work, the layered structure and broadband GaTa0.5Nb0.5O4:Cr3+ phosphors owning excellent performance were synthesized. The GaTa0.5Nb0.5O4:0.025Cr3+ phosphor provides a quantum yield of 92.2%, as well as an activation energy of 0.329. The NIR pc-LED formed via the combination of GaTa0.5Nb0.5O4:0.025Cr3+ phosphor and blue LED chip owns an output power of 4.56 mW and a photoelectric conversion efficiency of 9.37% when driven at 20 mA, and the output power increases to be 44.6 mW and the photoelectric conversion efficiency changes to be 7.19% when driven at 250 mA. The results of this work demonstrated that the Cr3+ activated GaTa0.5Nb0.5O4 phosphors may be a prospective candidate for NIR phosphor-converted light emitting diodes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
