Abstract
On a series of annealed and unannealed InSe thin films which were formerly produced by electrochemical deposition method, organic PMItz semiconductor compound was growth by physical vapour deposition (PVD) method. Structural analyses of the films carried out by X-ray diffractometry (XRD) method revealed that glass/ITO/InSe film formed in hexagonal InSe phase while glass/ITO/InSe(annealed) film formed in monoclinic In6Se7 and orthorombic In4Se3 phases. Surface analyses of the layers forming heterojunction were conducted by atomic force microscoby (AFM) and it is observed that the layers are homogenous and have different roughness values. Optical analyses of the films demonstrated that annealing of the film result with increased absorption coefficient and reduced energy band gap. Moreover, other optical parameters of the films i.e. refractive indice(n), extinction coefficient (k), real dielectric constant(Er), imaginary dielectric constant(Ei) and optical conductivity were determined and compared within 300-1000 nm range.
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