Abstract

Lead telluride crystals have been grown for the first time by the cold traveling heater method. The structural properties of the crystals have been studied by neutron diffraction, and rocking-curves with a full-width at half-maximum of about 36 arcsec have been measured, indicating a very weak mosaicity. The lattice parameter of the crystals has been found to be ∼0.64618±0.00004 nm by X-ray diffraction. Vickers microhardness in the range 25–30 kg/mm 2 have been measured, depending on the charge applied to the crystals. The electronic properties of the crystals, either as-grown or annealed, have been measured and demonstrate their very high purity level, as expected from the low-temperature growth and purification process by traveling heater method. Finally, the potentialities of PbTe as a substrate for the growth of HgCdTe layers are discussed in the light of all the results reported.

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