Abstract
Oriented gallium nitride (GaN) nanowires grown on Pt-coated Si (1 1 1) substrates, were synthesised using the chemical vapour deposition method under different Ga sources. The characteristics of the grown GaN nanowires were investigated using scanning electron microscopy and X-ray diffraction, which found that the as-synthesised GaN nanowires of the three samples are of different orientation, and all displayed hexagonal wurtzite structures of GaN crystals. The electron field-emission properties of the three samples of GaN nanowires showed a low turn-on field of 4.5, 5.5 and 6.2 V/µm, respectively, and field enhancement factors of 1337, 2948 and 2599, respectively.
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