Abstract
In this paper, a series of grahene films were fabricated on Ni coated Al<sub>2</sub>O<sub>3</sub> ceramic substrates by using microwave plasma-assisted chemical vapor deposition (MPCVD) technique. Raman spectroscopy and scanning electron microscope (SEM) were used to study the microstructure and surface morphology of the film. The field emission (FE) property of graphene films was measured in a high vacuum system. Field electron emission results showed a turn on field is 3.5 V/μm, and current density is 90μA/cm<sup>2</sup> at an electric field of 6 V/μm. The phenomenon of field emission was unstable and the current density was too small (no one exceeds 1mA/cm<sup>2</sup>). So the preparation method and process of graphene field emission device need further optimization, meanwhile, the mechanism and property of field emission require fully research.
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