Abstract
The diamond microcrystalline-aggregate array was fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer is used as substrate. The diamond array was evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum (XRD), scanning electron microscopy (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the diamond microcrystalline-aggregate array exhibited better electron emission properties. The turn-on field is only 1.1V/μm and a emission current density as high as 1mA/cm2 was obtained under an applied field of 3.3V/μm. The good field emission properties of the diamond microcrystalline-aggregate array are discussed relating to microstructure and electrical conductivity.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
