Abstract
P-doped GaN NWs in different contents have been synthesized via CCVD. The P-doped GaN NWs present a uniform density and the each nanowire possesses a uniform thickness. The structure of the NWs is single crystalline structure of hexagonal wurtzite. Furthermore, the results from FE test indicate that the turn-on field of the sample with P content of 2.24 at. % is as low as 2.85 V/μm, which presents significant improvement of the FE properties in contrast to pristine GaN NWs.
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