Abstract

AbstractThe thermal oxidation carbon self‐doped graphitic carbon nitride/NiS (TC‐g‐C3N4/NiS) composites with high electrochemical performance were synthesized by combining nickel sulfide with carbon self‐doping carbon nitride through a hydrothermal method. The graphitic carbon nitride (g‐C3N4) could improve charge fluidity by carbon self‐doping process, and be etched by further heat treatment, which provides conditions for the introduction of NiS particles. NiS particles uniformly adhered to the layers of g‐C3N4, thus avoiding particle aggregation. The as‐prepared active composite maintains high specific capacitance (1162 F/g at the current density of 1 A·g−1) and shows great cycle stability (capacitance retention rate of 82.0% after 8000 cycles). The conductivity of active composite has also been improved. Moreover, the assembled TC‐g‐C3N4/NiS//AC exhibit a relatively high‐energy density of 27 Wh/kg and exhibits excellent cycling performance with a capacity retention rate of 87.9% after 8000 cycles. Hence one can see that TC‐g‐C3N4/NiS composites have broad application prospects in the field of supercapacitors.

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