Synthesis and electronic-property control of Cs-encapsulated single- and double-walled carbon nanotubes by plasma ion irradiation

Abstract

The synthesis of Cs-encapsulated single-walled carbon nanotubes (Cs@SWNTs) and double-walled carbon nanotubes (Cs@DWNTs) is realized by a plasma ion-irradiation method. Transmission electron microscopy observations confirm that chainlike and amorphous Cs fill SWNTs and DWNTs, respectively. The electronic transport properties of Cs@SWNTs and Cs@DWNTs are experimentally investigated at both room and low temperatures by fabricating them as the channels of field-effect transistor devices. Our results reveal that both Cs@SWNTs and Cs@DWNTs exhibit n-type semiconducting behavior at room temperature. The electronic properties of the Cs-encapsulated nanotubes can be controlled by adjusting the Cs filling levels during the plasma ion irritation process. At low temperatures, Coulomb blockade transport characteristics are observed for both encapsulated nanotubes, and the size of quantum dots formed in Cs@DWNTs is much smaller than that formed in Cs@SWNTs. More importantly, the n-type characteristics of Cs@SWNTs and Cs@DWNTs are found to remain stable, even in air, owing to Cs encapsulation.