Abstract
ABSTRACTThe size of germanium (Ge) nanocrystals in a trilayer memory device structure was controlled by varying the thickness of the middle co-sputtered Ge plus silicon oxide layer. Such confinement of nanocrystals was not effective in a trilayer structure with a pure Ge middle layer. Significant diffusion of Ge atoms through the tunnel oxide or rapid thermal oxide (RTO) layer and into the silicon substrate was observed when the RTO layer thickness of the trilayer structure was reduced. This resulted in no (or very few) nanocrystals formed in the system. A higher charge storage capability was obtained from devices with a thinner RTO layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
