Abstract
Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.
Highlights
As potential building blocks for nanoelectronics [1,2], biochemical sensors [3,4], light-emitting devices with extremely low power consumption, and solar cells [5], nanotubes [6] and NWs [7] have drawn a lot of interest during the last two decades
Single-crystalline and epitaxial Si-NWs were grown by using OCTS as a precursor and Au colloids at a growth temperature of 700 °C, with a pre-annealing of the samples at 800 °C for 30 min
Effective growth of B-doped Si-NWs with OCTS and BBr3 requires a reduction of the growth temperature and the addition of H2
Summary
As potential building blocks for nanoelectronics [1,2], biochemical sensors [3,4], light-emitting devices with extremely low power consumption, and solar cells [5], nanotubes [6] and NWs [7] have drawn a lot of interest during the last two decades. In this paper we discuss the electric properties of Si-NWs grown with Si3Cl8 [26] as well as peculiarities of the in situ doped NW synthesis using this precursor in combination with BBr3 or PCl3. Single-crystalline and epitaxial Si-NWs were grown by using OCTS as a precursor and Au colloids at a growth temperature of 700 °C, with a pre-annealing of the samples at 800 °C for 30 min.
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