Synthesis and electrical characterization of CaBi 2Nb 2O 9 thin films deposited on Pt/Ti/SiO 2/Si substrates by polymeric precursor method

Abstract

We report the successful deposition of CaBi 2Nb 2O 9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm −2 at an applied electric field of 30 kV cm −1. The capacitance–voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm −2 and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10 8 switching cycles.