Synthesis and electrical and magnetic properties of Mn-doped SnO2 nanowires

Abstract

Diluted magnetic semiconductor Sn0.98Mn0.02O2 nanowires were fabricated using catalyst assisted chemical vapor deposition. Field-effect transistor based on an individual nanowire was fabricated, and the electrical properties were measured. The resistivity, conduction electron density, and the mobility of Sn0.98Mn0.02O2 nanowire were estimated to be 0.7 Ω cm, 5.17 × 1018 cm−3, and 12.8 cm2/Vs, respectively. Magnetic measurements reveal that sample exhibits room temperature ferromagnetism (RTFM), which should be an intrinsic characteristic. The origin of RTFM can be interpreted in terms of the band coupling model.