Abstract
Ternary Zintl phase materials of the formula K4In4X6, where X = As or Sb, have been prepared following a high-temperature procedure. The crystal structure of K4In4As6 has been determined at low temperature and consists of [In4As64–]n sheets of ca. 5 A thickness insulated by a layer of potassium ions of ca. 3 A thickness. The crystal structure of K4In4Sb6 has been determined at room temperature and is isomorphous with the K4In4Sb6 compound. For K4In4As6, a= 14.323(3)A, b= 7.106(2)A, c= 15.795(3)A, β= 90.30(2)°, space group P21/c, Z= 4, ρc= 4.44 g cm–3 at T= 100(5) K, R= 0.035 for 2688 unique observed reflections. For K4In4Sb6, a= 15.282(5)A, b= 7.544(1)A, c= 16.788(3)A, β= 90.52(2)°, space group P21/c, Z= 4, ρc= 4.62 g cm–3 at T= 299 K, R= 0.042 for 3001 unique observed reflections.
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