Synthesis and crystal growth of AIII BV compounds from elements

Abstract

Compact, inclusion-free GaAs and GaP ingots were synthetized and crystalline boules were grown using modified Bridgman and SSD methods. Preliminary investigations showed that in case of GaAs using travelling boat system after the synthesis semiconductor grade macrocrystalline ingots can be prepared by oriented freeze. For GaP the modified SSD (Synthesis Solution Diffusion) method proved to be useful producing macrocrystalline, pure materials.