Synthesis and comprehensive synchrotron-based structural analysis of Si-doped nanodiamond composite films deposited on cemented carbide

Abstract

Si-doped nanodiamond composite (NDC) films were deposited on unheated WC − Co substrates by coaxial arc plasma deposition for advanced cutting tools applications. The nanoindentation test revealed changes in films hardness and Young's modulus attributed to various Si doping concentrations (0, 1, 5, and 20 at.%) and the catalytic effects of Co diffused from the substrate surface into the films. To reveal the physical origin behind these changes, the films' structure was examined by synchrotron-based Auger electron spectroscopy (AES), soft X-ray photoemission spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). The AES and XPS analysis showed a consistent correlation between nanoindentation measurements and the estimated C sp3 fraction in the films. The NEXAFS spectra revealed intense C − C σ* resonance, consistent with the measured film hardness. The 1 at.% Si-doped film, deposited with an undoped NDC buffer layer to mitigate the Co catalytic effects, exhibited the highest hardness of 60 GPa, the largest C sp3 fraction, and the most intense CC σ* peak. Si doping resulted in the formation of C − Si sp3 bonds at the expense of C sp2 bonds, increasing the fraction of C sp3 bonds and enhancing film hardness. The synchrotron-based analysis effectively revealed the electronic states of NDC hard coatings, particularly after the removal of surface contaminants through mechanical polishing.