Synthesis and compositional tuning of the band properties of isostructural TMA–SnSxSe1–x−1 Nanoporous Materials

Abstract

Crystalline, nanoporous tin chalcogenide semiconducting materials (see Figure) in which the band gap can be fine tuned chemically are reported. Variation of the proportions of slfur and selenium in the title materials results in the absorpton maxima red shifting with increasing selenium content over a range of 100 nm (350–450 nm). magnified image