Abstract
The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.
Highlights
Metal oxides are the basis of modern diverse smart and functional materials and devices because physical and chemical properties of these oxides can be tuned.Functional properties of metal oxides depends on many chemical and structural characteristics such as chemical composition, various kinds of deficiencies, morphology, particle size, surface-to-volume ratio, etc
We investigate the effect of new precursor SnC2O4 on the characteristics of tin oxide obtained by chemical vapor deposition (CVD)
Electron Microscopy The particle sizes of the obtained samples were determined with a transmission electron microscope TEM 100-01
Summary
Functional properties of metal oxides depends on many chemical and structural characteristics such as chemical composition, various kinds of deficiencies, morphology, particle size, surface-to-volume ratio, etc. Metal oxides SnO2, ZnO, In2O3, and CdO are widebandgap n-type semiconductors and the most frequently used as a sensitive material for the gas sensors. Obtained SnO2 samples (Table 2) were analyzed by electron microscopy, X-ray diffraction and spectrophotometrically.
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