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Abstract
Stannous sulfide (SnS) was grown on SiO2/Si substrates via chemical vapor deposition technique and characterized using optical microscopy, scanning electronic microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, atomic force microscopy and photoluminescence (PL) spectrum, respectively. The results indicate that SnS with two distinct morphologies of “the ultra-thin SnS flakes and the micron-thick SnS crystals” can be grown on different zones of the SiO2/Si substrate. The ultra-thin SnS flakes are single crystal with thickness of 139 nm and maximum lateral sizes of 371 μm. However, the micron-thick SnS crystals are 2.2 μm-thick and a lateral size of 15 μm with square shape. The difference in morphology between the ultra-thin SnS flakes and the micron-thick SnS crystals is mainly due to the difference in the initial nucleation way. Both the ultra-thin SnS flakes and the micron-thick SnS crystals are orthorhombic structure with high-purity. PL strong peak of the ultra-thin SnS flakes is at 950 nm, and it is at 945 nm for the micron-thick SnS crystals. Their optical band gap is approximately 1.31 eV.
Published Version
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