Synthesis and characterization of SrFeOx hetero-film resistance-switching device with low operation voltage

Abstract

As a critical topological phase transition material, SrFeOx could play an essential role in the field of resistive memory. How to implement resistance-switching more softly and ensure the stability of materials has always been a relevant research hotspot. Regulating the oxygen environment during the deposition process of the films can effectively control the stoichiometry of the functional layer and then improve the resistance-switching characteristics of the device. In this paper, a SrFeOx hetero-film was prepared by oxygen pretreatment on the SrRuO3 surface before SrFeOx deposition, and the as-assembled micrometer-scale device exhibits a low set operating voltage of 0.6 V and favorable cycling characteristics. The SrFeOx hetero-film reveals a vertical brownmillerite superlattice-like structure with ∼20 nm perovskite buffer layer, which benefits the connection and rupture of conductive filament. Additionally, XPS and UV–vis were used to analyze the bonding energy and band gap of SrFeOx hetero-film, and offers the experimental basis for the explanation of the conductive mechanism. Therefore, the device based on SrFeOx hetero-film with low operation voltage provides a reference for low power consumption research on topological phase transition material.