Abstract
Transparent conducting Sb-doped SnO2 (antimony-doped tin oxide: ATO) films were prepared on Corning glass substrate by dc magnetron sputtering using SnO2 mixed with 6 wt.% of Sb at various substrate temperatures of 100–600 °C and dc powers of 100–200 W. All ATO films were deposited with a thickness of 300 nm. X-ray defractometer (XRD) measurements showed the ATO films to be crystallized with strong (101) orientation as substrate temperature increases over 300 °C. Grain size was calculated from the XRD spectra using the Scherrer equation. The ATO film in this work had a resistivity of order 10− 3 and carrier concentration of order 1020.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
