Abstract
This paper reports on synthesis and characterizations of Sn doped ZnO nanowires. Sn doped ZnO nanowires was successfully been grown using carbothermal reduction method. Morphological and structures were characterized using FESEM, revealed that nanowires grown on random direction with diameter around 30 - 60 nm. EDX analysis was used to confirm composition element, Sn element was found in the nanowires in less than 1% of total composition. XRD was applied to examine structure quality of Sn doped ZnO nanowires, XRD spectra shown the structure have high crystallinity and it is wurtzite structure. No contrast different were found between pure and Sn doped ZnO nanowires. I-V measurement shown that using Sn as dopant may decrease the resistance of ZnO nanowires.
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