Abstract

The synthesis of carbon-based materials, such as man-made diamonds, superhard C3N4 materials, SiCN crystals, and other carbon-based nanostructured materials, has attracted considerable attention for many decades in academic and industrial communities. However, so far, researchers have not successfully linked the growth mechanisms of carbon-based materials deposited under different synthetic conditions and methods. In fact, a single machine may produce many of these materials. This paper is aimed to study the linkages among various carbon-based materials synthesized on Si wafers using the same microwave plasma chemical vapor deposition system, including SiCN crystalline films, SiCN nanotubes, carbon nanotubes (CNTs), conical carbon nanorods, and other nanostructured materials.

Highlights

  • Sustaining Moore’s law requires constant transistor scaling, boosting the creation of new materials for future nanoelectronics applications

  • carbon nanotubes (CNTs) are expected to overcome the physical limitation of current Si transistors and Cu interconnections in molecular electronics.[1,2,3,4,5]

  • This study systematically evaluates the synthesis of CNTs by microwave plasma chemical vapor deposition (MPCVD) using an Fe catalyst, a CoSi2 film, and Ni islands, which frequently serve as gate electrodes and contact materials in Si microelectronics

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Summary

Introduction

Sustaining Moore’s law requires constant transistor scaling, boosting the creation of new materials for future nanoelectronics applications. CNTs are expected to overcome the physical limitation of current Si transistors and Cu interconnections in molecular electronics.[1,2,3,4,5] their integration into Si-based metal-oxidesemiconductor field effect transistors (MOSFETs) or new nanoelectronics remains challenging when developing these transistors and interconnections. They are naturally deposited as bundles in a vertical direction because they tend to adhere to each other vertically. Nanotube morphologies and microstructures were identified by scanning (SEM) and transmission (TEM) electron

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