Abstract
The peculiarity of dusty plasma reactors offers a convenient way to obtain processed particles at submicronic levels, with successive layers of different materials grown by using pulsed gas flows, and different plasma chemistries in succession. This concept is applied to the synthesis of silicon carbide (SiC) particles. In this paper two significant situations are reported showing that particles can be synthesized with different properties by varying the process parameters (gas-flow handling, radio-frequency power level). These properties include broad or narrow size dispersion, almost crystalline or amorphous structure, and widely varying Si/C stoichiometry. Monosized particles with high specific surfaces have been obtained by a two-step growth process by using limited radio-frequency power.
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