Abstract
Silicon nitride (Si3N4) nanowires and nanobelts have been successfully prepared via direct crystallization of amorphous Si3N4 nanoparticles under high temperature in a N2 flow. The products were characterized by X‐ray powder diffraction, scanning electron microscopy, transmission electron microscopy, high‐resolution electron microscopy, and electron diffraction. They are pure α‐phase hexagonal single‐crystal structures. The nanowires are long and smooth; nanobelts are long and twisted. In our samples, there exist some special nanostructures, such as wire‐inserted hexagonal nanosheet and hollow‐chain‐shaped structure. The different growth modes were understood upon the observations and characterization of those microstructures. The solid–liquid–solid growth mechanism is also discussed.
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