Abstract
Abstract Boron-doped amorphous carbon was synthesized by polymerizing naphthalene and triphenylborane with subsequent heat treatment by spark plasma sintering. The boron-doped carbon material has negative Seebeck coefficient (−0.22 mV K−1), which indicates the carbon material functions as an n-type semiconductor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
