Abstract
A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.
Highlights
The ability to retrofit systems with power consuming electronics without having to consider issues associated with providing an independent power source offers a significant advantage for devices in hard to reach locations [1]
Previous investigations on the dielectric and electrical properties of many ceramic systems, such as barium titanate (BT), lead zirconate titanate (PZT), lead magnesium niobate (PMN), lead titanate (PT), PMN-PT, Pb(Zr1−x Tix)O3 (PZT)-BT, and PMN-PZT have demonstrated the importance of the subject [10,11,12,13]
The solutions used for the fabrication of PZT-PZN films were prepared using a sol-gel process that we previously described for Pb(Zr1−x,Tix)O3 [17, 18]
Summary
The ability to retrofit systems with power consuming electronics without having to consider issues associated with providing an independent power source offers a significant advantage for devices in hard to reach locations [1]. To accomplish this, improving the piezoelectric material used in the cantilever is of paramount importance [5]. Previous investigations on the dielectric and electrical properties of many ceramic systems, such as barium titanate (BT), lead zirconate titanate (PZT), lead magnesium niobate (PMN), lead titanate (PT), PMN-PT, PZT-BT, and PMN-PZT have demonstrated the importance of the subject [10,11,12,13]. (PZT-PZN) system because of its high dielectric, piezoelectric, and ferroelectric properties [14,15,16]. It is important to have a good material, and a device design that matches the material properties For this reason, the search for different device designs is of great interest. Experimental voltage output at the resonance frequencies of the cantilevers is compared with simulations
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