Synthesis and characterization of nitrogen-doped monolayer and multilayer graphene on TEM copper grids

Abstract

Single- and multi-layer nitrogen-doped graphene was deposited on TEM copper grids by chemical vapor deposition from ammonia and methane. By controlling the gas mixture ratio the nitrogen atomic percentage in the host graphene can be regulated, ranging from 0.7% to 2.9%. High-resolution transmission electron microscopy and Raman spectroscopy reveal that high-quality nitrogen-doped single- and multi-layer graphene sheets were obtained. The existence of nitrogen substitution in the graphene lattices is confirmed by X-ray photoelectron spectroscopy.