Abstract
Abstract New benzo[b]benzo[4,5]thieno[2,3-d]thiophene derivatives were synthesized and characterized as organic semiconductors in top-contact/bottom-gate organic field-effect transistors. All these compounds are new and were fully characterized by thermogravimetric analysis, differential scanning calorimetry, UV–Vis spectroscopy and energy-resolved electrochemical impedance spectroscopy. New compounds were deposited via thermal evaporation in high vacuum to fabricated highly homogeneous thin films and investigated by atomic force microscopy (AFM) and ellipsometry. Organic field-effect transistors based on prepared compounds showed p-channel characteristics with mobilities as high as 4 cm2V-1 s−1.
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