Abstract

In the present investigation efforts are made to prepare CdZnSSechalcogenide thin films by simple, cost effective arrested precipitation technique (APT). The films were obtained in a chemical bath maintained at 55±5°C temperature, pH 10.8±0.2 and deposition time 90 min. The obtained thin films were thoroughly characterized paying particular attention to their structural, compositional, morphological and optical properties. The surface morphology and composition of as deposited thin films are studied by using Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). SEM micrographs reveal non- uniform distribution and nearly spherical grains. The X-ray diffraction pattern showed that highly textured CdZnSSe films with hexagonal structure. The optical absorption spectra show band gap value 2.12 eV.

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