Abstract
The substantial and intriguing applications in the field of optoelectronics, the fabrication of nano structure of ZnO based UV LEDs, FETs has been stalled because of the challenges/demand to put forth in the growth of highly stable, low resistive and high device performance. Growth of these Nano structure is difficult because of the self- compensating native donor defects, oxygen vacancies (Vo) and zinc interstitials (Zni) in the system. The n-type conductivity can be realized by doping with group III elements, and the band gap of ZnO lies in UV region and it can be used as UV detector. In presence of UV illumination, electrical conductivity increase due to generation of more charge carriers. In this present work, the authors to discuss the formation of pure and indium doped ZnO nanorods by chemical bath deposition.
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