Abstract

Nanocrystalline Silicon carbide thin films were deposited using MHz very high frequency plasma enhanced chemical vapor deposition VHF PECVD system on the Multimode optical fiber MMF The mixture of methane CH and silane SiH as reactive precursor gases and H as a carrier were used The effects of deposition time on the bonding energy composition and microstructural characteristics of SiC thin films were investigated using FTIR EDS and FE SEM The results reveal that the nanocrystalline SiC films were successfully deposited on the MMF The thickness of SiC films increased from nm to micro m as the deposition time is increased from to minutes The sensitivity of MMF increased from dB UIR to dB UIR by the min deposition time of SiC Thus the MHz VHF PECVD seemed to be a suitable technique for coating nanocrystalline SiC thin films and enhancing the sensitivity of the MMF nbsp

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