Abstract
Diamond growth on polycrystallineTi3SiC2 was investigated using microwave plasma chemical vapour deposition (MPCVD)under typical microcrystalline diamond growth conditions. Scanning electronmicroscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy andsynchrotron near edge extended x-ray absorption fine structure spectroscopy (NEXAFS)were used to characterize the synthesized films. A diamond nucleation density of1011 cm−2 has been achieved and consequently, dense nanocrystalline diamond (NCD) thin films withan average grain size of approximately 30 nm and a film growth rate of approximately2 µm h−1 were synthesized. The NEXAFS spectra of the NCD films exhibitclear spectral characteristics of natural diamond with a weak peak ofsp2 carbon. Cross-sectional SEM images show that the NCD films have an equiaxed grainstructure and a dense film/substrate interface.
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