Abstract

To fabricate a low cost, highly conductive ink for inkjet printing, we synthesized agram scale of uniformly sized Sn nanoparticles by using a modified polyol processand observed a significant size-dependent melting temperature depression from234.1 °C for bulkSn to 177.3 °C for 11.3 nm Sn nanoparticles. A 20 wt% of Sn nanoparticles was dispersed in the 50% ethylene glycol:50% isopropyl alcohol mixed solvent for the appropriate viscosity (11.6 cP) and surface tension(32 dyn cm − 1). To improve the electrical property, we applied the surface treatments of hydrogen reductionand plasma ashing. The two treatments had the effect of diminishing the sheet resistance from1 kΩ/sq to50 Ω/sq. In addition,conductive patterns (1 cm × 1 cm) were successfully drawn on the Si wafer using an inkjet printing instrumentwith conductive Sn ink. The maximum resistivity for an hour of sintering at250 °C was64.27 µΩ cm, which is six times higher than the bulk Sn resistivity(10.1 µΩ cm).

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