Abstract

An effective solution-based process is developed for the fabrication of iridium oxide thin film in application of bio-stimulating electrode. The chemical bath employs a pre-coordination scheme in which the IrCl63− precursor undergoes a ligand exchange step to form stable Ir(OH)63−, followed by an oxidative electroless deposition to render iridium oxide thin film with desirable surface morphologies. Relevant processing parameters have been optimized to increase the utilization rate of Ir precursor for a thicker deposit without any noticeable defect. The iridium oxide thin film is mechanically robust and exhibits superior performances in both charge storage capacity and charge injection capacity. In particular, the normalized charge storage capacity is recorded at 0.367 mC/(cm2˙nm), a value that is five times greater than comparable iridium oxide thin films. In addition, in cell viability test, the iridium oxide thin film demonstrates impressive biocompatibility with desirable growth of neuronal cells.

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