Synthesis and characterization of InN quantum dots for optoelectronic applications

Abstract

In recent years, to deal with energy crises is becoming a red issue in research community. One of the solution to address the problem is to synthesize novel materials from group III-V semiconductors by tuning their band gaps for opto electronic applications including solar cells and LEDs. Indium nitride is a direct band gap semiconductor suitable for green and blue LEDs, solar cells. Its high electron mobility makes it promising candidate for transistors. This research work is an effort to a introduce a novel low temperature and cost effective method of synthesis for indium nitride (InN) quantum dots. Solvomethermal method is adopted to synthesize InN QDs by vayring molar concentration and sonication time and their effect is studied on size and band gap of InN QDs. This research work will help full for LEDs and solar cells applications. The XRD technique is used to study the crystal structure and size. UV–vis is used to study the band gap of samples; FTIR is used to study the presence of any functional groups. AFM is used to study the shape and surface morpjology of quantum dots.