Abstract
We report synthesis of colloidal quantum dots (CQDs), indium gallium phosphide with zinc sulphide shell (In1−xGaxP@ZnS) by a hot injection method and investigate effects of In/Ga ratio on the optical properties of the obtained CQDs. The bandgap of CQDs (1.34–3.54eV) is controlled by the In/Ga ratio without the quantum confinement effect. The photoluminescence (PL) quantum yield is also dependent on the In/Ga ratio, and temperature dependent PL results show that the randomness of crystal lattice is the most influential parameter. These results show that the In1−xGaxP alloy CQDs can be useful for absorbing the whole range of visible light. In addition, this article can provide background knowledge regarding effect of core metal composition on the optical properties of produced CQDs.
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