Abstract
In this work,we presented some complementary studies for In(O,OH)S thin films deposited on AgInS 2 thin films to fabricate a new system absorbent-layer/buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS 2 layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition.X-ray diffraction measurements indicated that AgInS 2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure.The AgInS 2 thin films presented p-type conductivity, andfrom tranductance measurements it was found a high absorption coefficient (greater than 10 4 cm −1 ) and an energy band gap of 1.95 eV; and In(O,OH),S thin films presented Egabout 3.01 eV;morphological analysis indicated that under this synthesis conditions,In(O,OH)S thin films coated completely the AgInS 2 absorber layer. Finally, in this work, the Avrami-Erofeev equation was used to study In(O,OH)S thin film growth rate on AgInS 2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.
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